Abstract: Y doped ZnO semiconductor materials (Zn-MOF-Y) were prepared by self-sacrificing template method and the synthetic materials were characterized. The microcosmic characteristics of Zn-MOF-Y were nanospheres composed of nanoparticles. The material is a composite of ZnO and YF₃, and has four elements including Zn, O, Y and F. The specific surface area of the material is 15.7844 m²/g and the average pore size is 15 nm. The semiconductor gas sensor prepared with Zn-MOF-Y as the sensor material was tested for gas sensitivity, and its response value to 100 mg/L NO₂ was 20, and the response of the sensor showed a linear relationship with the concentration. The response/recovery time to 100 mg/L NO₂ is 82/64 s and the sensor has excellent stability. These provide the possibility for the practical application of sensors.