Abstract: Silicon carbide (SiC), a third-generation wide-bandgap semiconductor, is increasingly replacing silicon (Si) in the design of high-frequency, high-voltage, and high-power devices due to its superior material properties, such as a wider bandgap, higher breakdown electric field, faster saturated electron drift velocity, and better thermal conductivity. This paper systematically compares the differences in gate driving characteristics between silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOSFETs) and silicon metal-oxide-semiconductor field-effect transistor (Si MOSFETs), examining their key differences from five dimensions: material properties, driving voltage, switching speed, driving circuit, and power consumption. Furthermore, the Miller plateau phenomenon specific to SiC MOSFET driving is thoroughly analyzed, followed by a comprehensive discussion on the performance differences between SiC and Si materials.